This title appears in the Scientific Report :
2003
Please use the identifier:
http://hdl.handle.net/2128/1246 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1633027 in citations.
Sharp ferroelectric phase transition in strained epitaxial SRO-BST-SRO capacitors
Sharp ferroelectric phase transition in strained epitaxial SRO-BST-SRO capacitors
Single-crystalline all-perovskite SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors epitaxially grown on SrTiO3 exhibit a sharp paraelectric-to-ferroelectric phase transition at 350 K with a maximum permittivity of about 6660. This value is comparable to that of bulk ceramics and exceeds by several...
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Personal Name(s): | Dittmann, R. |
---|---|
Plonka, R. / Vasco, E. / Pertsev, N. A. / He, J. Q. / Jia, C. L. / Hoffmann-Eifert, S. / Waser, R. | |
Contributing Institute: |
Elektrokeramische Materialien; IFF-EKM Mikrostrukturforschung; IFF-IMF |
Published in: | Applied physics letters, 83 (2003) S. 5011 |
Imprint: |
Melville, NY
American Institute of Physics
2003
|
Physical Description: |
5011 |
DOI: |
10.1063/1.1633027 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
83 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1633027 in citations.
Single-crystalline all-perovskite SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors epitaxially grown on SrTiO3 exhibit a sharp paraelectric-to-ferroelectric phase transition at 350 K with a maximum permittivity of about 6660. This value is comparable to that of bulk ceramics and exceeds by several times the highest values reported for Ba0.7Sr0.3TiO3 thin film capacitors. The observed thickness dependence of the dielectric response is analyzed with the aid of a thermodynamic theory. It is shown that a weak decrease of the permittivity with the Ba0.7Sr0.3TiO3 thickness decreasing from 200 to 10 nm can be explained solely by the thickness-dependent strain relaxation in epitaxial films without assuming the presence of low-permittivity layers at the film/electrode interfaces. (C) 2003 American Institute of Physics. |