This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1088/1742-5468/2009/01/P01046 in citations.
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
Noise spectroscopy of AlGaN/GaN HEMT structures with long channels
In this paper we discuss the effect of dissipated power on the characteristic time of noise spectra transformation investigated in wide-bandgap AlGaN/GaN transistor structures with long channels. It is found that the characteristic time as a function of temperature demonstrates an exponential depend...
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Personal Name(s): | Vitusevich, S. A. |
---|---|
Petrychuk, M. V. / Kurakin, A. M. / Danylyuk, S. V. / Mayer, D. / Bougrioua, Z. / Naumov, A. V. / Belyaev, A. E. / Klein, N. | |
Contributing Institute: |
Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 JARA-FIT; JARA-FIT |
Published in: | Journal of statistical mechanics: theory and experiment (2009) S. 01046-1-10 |
Imprint: |
Bristol
IOP Publ.
2009
|
Physical Description: |
01046-1-10 |
DOI: |
10.1088/1742-5468/2009/01/P01046 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Statistical Mechanics : Theory and Experiment
|
Subject (ZB): | |
Publikationsportal JuSER |
In this paper we discuss the effect of dissipated power on the characteristic time of noise spectra transformation investigated in wide-bandgap AlGaN/GaN transistor structures with long channels. It is found that the characteristic time as a function of temperature demonstrates an exponential dependence with definite activation energy. Obtained results are explained based on the developed model of non-equilibrium fluctuations of the sample resistance. These fluctuations cause a local overheating due to local change of resistance. In the long channels these fluctuations may create overheating regions with two different self-heating temperatures, leading to different activation dependences, observed in the experiment. |