This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1209/epl/i2003-00191-8 in citations.
Curie temperatures of III-V magnetic semiconductors calculated from first-principles
Curie temperatures of III-V magnetic semiconductors calculated from first-principles
Curie temperatures of the diluted magnetic semiconductors (Ga, Mn) As, (Ga, Mn) N, (Ga, Cr) As and (Ga, Cr) N are evaluated from first principles. The electronic structure is calculated in the local spin density approximation by using the Korringa-Kohn-Rostoker method combined with the coherent pote...
Saved in:
Personal Name(s): | Sato, K. |
---|---|
Dederichs, P. H. / Katayama-Yoshida, H. | |
Contributing Institute: |
Theorie III; IFF-TH-III |
Published in: | epl, 61 (2003) S. 403 - 408 |
Imprint: |
Les Ulis
EDP Sciences
2003
|
Physical Description: |
403 - 408 |
DOI: |
10.1209/epl/i2003-00191-8 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Europhysics Letters
61 |
Subject (ZB): | |
Publikationsportal JuSER |
Curie temperatures of the diluted magnetic semiconductors (Ga, Mn) As, (Ga, Mn) N, (Ga, Cr) As and (Ga, Cr) N are evaluated from first principles. The electronic structure is calculated in the local spin density approximation by using the Korringa-Kohn-Rostoker method combined with the coherent potential approximation to describe the substitutional and spin disorder. From the total energy differences between the ferromagnetic state and the spin-glass state, realistic estimations of Curie temperatures are achieved by using a mapping on the Heisenberg model in the mean-field approximation. Effects of additional carrier doping treatments are also investigated. Very large Curie temperatures are obtained, lying above room temperature for ( Ga, Mn) N, ( Ga, Cr) As and ( Ga, Cr) N. Upon hole doping the Curie temperature of (Ga, Mn) N further increases, while (Ga, Mn) As shows a plateau behavior. |