This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1109/LED.2008.2008108 in citations.
A nonvolatile memory with resistively switching methyl-silsesquioxane
A nonvolatile memory with resistively switching methyl-silsesquioxane
Crossbar structures with integrated methyl-silsesquioxane (MSQ) were fabricated by UV nanoimprint lithography. The sandwiched MSQ film was used for the planarization of the bottom electrodes' interface as well as for the realization of functional resistively switching crosspoint junctions. With...
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Personal Name(s): | Meier, M. |
---|---|
Schindler, C. / Gilles, S. / Rosezin, R. / Rüdiger, A. / Kügeler, C. / Waser, R. | |
Contributing Institute: |
Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 JARA-FIT; JARA-FIT Elektronische Materialien; IFF-6 |
Published in: | IEEE Electron Device Letters, 30 (2009) S. 8 - 10 |
Imprint: |
New York, NY
IEEE
2009
|
Physical Description: |
8 - 10 |
DOI: |
10.1109/LED.2008.2008108 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
IEEE Electron Device Letters
30 |
Subject (ZB): | |
Publikationsportal JuSER |
Crossbar structures with integrated methyl-silsesquioxane (MSQ) were fabricated by UV nanoimprint lithography. The sandwiched MSQ film was used for the planarization of the bottom electrodes' interface as well as for the realization of functional resistively switching crosspoint junctions. With our process, future nonvolatile crossbar memories with stacking and, thus, high integration density potential can be realized. Using MSQ as functional material additionally indicates an attractive opportunity because it is highly CMOS compatible. By programming word registers with different bit patterns, we demonstrate the potential of this crossbar architecture for future memory and logic applications. |