This title appears in the Scientific Report :
2002
Please use the identifier:
http://dx.doi.org/10.1007/s11664-002-0115-6 in citations.
Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors
Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors
Four different layer structures are used to study deep-level traps in AlGaN/GaN high-electron mobility transistors (HEMTs) by photo-ionization spectroscopy. The structures grown on sapphire substrates by metal-organic chemical vapor deposition show nearly identical Hall data. However, the direct cur...
Saved in:
Personal Name(s): | Wolter, M. |
---|---|
Javorka, P. / Fox, P. T. / Marso, M. / Lüth, H. / Kordos, P. / Carius, R. / Alam, A. / Heuken, M. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of electronic materials, 31 (2002) S. 1321 - 1324 |
Imprint: |
Warrendale, Pa
TMS
2002
|
Physical Description: |
1321 - 1324 |
DOI: |
10.1007/s11664-002-0115-6 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Journal of Electronic Materials
31 |
Subject (ZB): | |
Publikationsportal JuSER |
Four different layer structures are used to study deep-level traps in AlGaN/GaN high-electron mobility transistors (HEMTs) by photo-ionization spectroscopy. The structures grown on sapphire substrates by metal-organic chemical vapor deposition show nearly identical Hall data. However, the direct current (DC) performance of HEMTs with identical geometry is found to differ strongly. In all structures investigated, two distinct defect levels, namely, at 2.84-2.94 eV and 3.24-3.28 eV, were found from the fits of the photo-ionization cross-sectional data. Additionally, different trap concentrations can be deduced. These are in good correlation with the different transconductance and drain current measured. It is assumed that the defect levels observed are related to the AlGaN surface. |