This title appears in the Scientific Report :
1999
Strain dependent growth of silicon on Ge/Si-C heterostructures
Strain dependent growth of silicon on Ge/Si-C heterostructures
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Personal Name(s): | Butz, R. |
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Lüth, H. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Journal of crystal growth, 200 (1999) S. 407 - 413 |
Imprint: |
Amsterdam [u.a.]
Elsevier
1999
|
Physical Description: |
407 - 413 |
Document Type: |
Journal Article |
Research Program: |
ohne FE |
Series Title: |
Journal of Crystal Growth
200 |
Publikationsportal JuSER |
Description not available. |