This title appears in the Scientific Report :
1999
MBE growth and structural properties of GaN and AlN on 3CSiC(001) substrates
MBE growth and structural properties of GaN and AlN on 3CSiC(001) substrates
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Personal Name(s): | Gerthsen, D. |
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Neubauer, B. / Dieker, C. / Lantier, R. / Rizzi, A. / Lüth, H. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Journal of crystal growth, 200 (1999) S. 353 |
Imprint: |
Amsterdam [u.a.]
Elsevier
1999
|
Physical Description: |
353 |
Document Type: |
Journal Article |
Research Program: |
Halbleiterschichtsysteme und Mesoskopische Strukturen |
Series Title: |
Journal of Crystal Growth
200 |
Publikationsportal JuSER |
Description not available. |