This title appears in the Scientific Report :
1999
Enhanced strain relaxation of epitaxial SiGe layers on Si(100)after H+ ion implantation
Enhanced strain relaxation of epitaxial SiGe layers on Si(100)after H+ ion implantation
Saved in:
Personal Name(s): | Holländer, B. |
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Mantl, S. / Liedtke, R. / Mesters, S. / Herzog, H. J. / Kibbel, H. / Hackbarth, T. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Nuclear instruments & methods in physics research / B, 148 (1999) S. 200 |
Imprint: |
Amsterdam [u.a.]
Elsevier
1999
|
Physical Description: |
200 |
Document Type: |
Journal Article |
Research Program: |
Ionentechnik |
Series Title: |
Nuclear Instruments and Methods in Physics Research Section B
148 |
Publikationsportal JuSER |
Description not available. |