This title appears in the Scientific Report :
1999
Please use the identifier:
http://hdl.handle.net/2128/4447 in citations.
Charakterisierung und Optimierung selektiv gewachsener vertikaler Silizium-MOS-Feldeffekttransistoren
Charakterisierung und Optimierung selektiv gewachsener vertikaler Silizium-MOS-Feldeffekttransistoren
Characterization and Optimization of Selectively Grown Vertical Si-MOS Transistors The subject of this thesis was the process development, characterization and optimization of silicon based MOS field-effect transistors. The active transistor region was grown using selective epitaxy. Two different la...
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Personal Name(s): | Klaes, D. |
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Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Imprint: |
Jülich
Forschungszentrum, Zentralbibliothek
1999
|
Dissertation Note: |
Aachen, Techn. Hochsch., Diss., 1999 |
Document Type: |
Book Dissertation / PhD Thesis |
Research Program: |
ohne FE |
Series Title: |
Berichte des Forschungszentrums Jülich
3644 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Characterization and Optimization of Selectively Grown Vertical Si-MOS
Transistors
The subject of this thesis was the process development, characterization and optimization
of silicon based MOS field-effect transistors. The active transistor region
was grown using selective epitaxy. Two different layouts have been investigated and
optimized in respect of their electrical characteristics. For one of them (V-FET) only
weIl established self-aligning standard technology is used, where the gate oxide is
obtained by oxidation of the epitaxially grown transistor stack. For the radio frequency
optimized layout (VOXFET) the stack is grown after the deposition of the
gate oxide. This leads to a reduction of overlap capacitances while the channel-togate
self-alignment is lost.
p-channel transistors with channel lengths between 100 nm and 200 nm and
gate oxide thicknesses of 6 nm - 10 nm showed transconductances up to 200 mS/mm.
The subthreshold slope turned out to be 11.5 mV I dec. Radio frequency measurements
on optimized VOXFETs showed cut-off frequencies up to 20 GHz. These are
the highest cut-off frequencies reported for vertical MOSFET up to now. |