This title appears in the Scientific Report :
1999
Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001) : heterojunction electronic properties
Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001) : heterojunction electronic properties
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Personal Name(s): | Lantier, R. |
---|---|
Boscherini, P. C. / Rizzi, A. / d'Acapito, F. / Mobilio, S. / Lüth, H. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Physica status solidi / A, 176 (1999) S. 615 |
Imprint: |
Weinheim
Wiley-VCH
1999
|
Physical Description: |
615 |
Document Type: |
Journal Article |
Research Program: |
Halbleiterschichtsysteme und Mesoskopische Strukturen |
Series Title: |
Physica Status Solidi A
176 |
Publikationsportal JuSER |
Description not available. |