This title appears in the Scientific Report :
1999
Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
Saved in:
Personal Name(s): | Moers, J. |
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Klaes, D. / Tönnesmann, A. / Vescan, L. / Wickenhäuser, S. / Grabolla, T. / Marso, M. A. / Kordos, P. / Lüth, H. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Solid state electronics, 43 (1999) S. 529 - 535 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
1999
|
Physical Description: |
529 - 535 |
Document Type: |
Journal Article |
Research Program: |
Halbleiterbauelemente und Analytik |
Series Title: |
Solid-State Electronics
43 |
Publikationsportal JuSER |
Description not available. |