This title appears in the Scientific Report :
1999
AlN and GaN epitaxial heterojunctions on 6H-SiC(0001) : valence band offset and polarization fields
AlN and GaN epitaxial heterojunctions on 6H-SiC(0001) : valence band offset and polarization fields
Saved in:
Personal Name(s): | Rizzi, A. |
---|---|
Lantier, R. / Monti, F. / Lüth, H. / della Sala, F. / di Carlo, A. / Lugli, P. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Journal of vacuum science & technology / B, 17 (1999) S. 1674 |
Imprint: |
New York, NY
Inst.
1999
|
Physical Description: |
1674 |
Document Type: |
Journal Article |
Research Program: |
Halbleiterschichtsysteme und Mesoskopische Strukturen |
Series Title: |
Journal of Vacuum Science and Technology B
17 |
Publikationsportal JuSER |
Description not available. |