This title appears in the Scientific Report :
1999
Please use the identifier:
http://hdl.handle.net/2128/17206 in citations.
Effect of an epitaxial CoSi2 layer on diffusion of B and Sb in Si during annealing and oxidation
Effect of an epitaxial CoSi2 layer on diffusion of B and Sb in Si during annealing and oxidation
Saved in:
Personal Name(s): | Tyagi, A. K. |
---|---|
Kappius, L. / Breuer, U. / Bay, H. L. / Becker, J. S. / Mantl, S. / Dietze, H.-J. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI Zentralabteilung für Chemische Analysen; ZCH |
Published in: | Journal of applied physics, 85 (1999) S. 7639 |
Imprint: |
Melville, NY
American Institute of Physics
1999
|
Physical Description: |
7639 |
Document Type: |
Journal Article |
Research Program: |
Methodenentwicklung zur massenspektrometrischen Tiefenprofilanalyse von Oberflächen Ionentechnik |
Series Title: |
Journal of Applied Physics
85 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Description not available. |