This title appears in the Scientific Report :
1999
Please use the identifier:
http://hdl.handle.net/2128/18089 in citations.
Nanometer patterning of epitaxial CuSi2/Si(100) for ultrashort channel Schottky barrier metal-oxide-semiconductor field effect transistors
Nanometer patterning of epitaxial CuSi2/Si(100) for ultrashort channel Schottky barrier metal-oxide-semiconductor field effect transistors
Saved in:
Personal Name(s): | Zhao, Q. T. |
---|---|
Klinkhammer, F. / Dolle, M. / Kappius, L. / Mantl, S. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: | Applied physics letters, 74 (1999) S. 454 - 456 |
Imprint: |
Melville, NY
American Institute of Physics
1999
|
Physical Description: |
454 - 456 |
Document Type: |
Journal Article |
Research Program: |
ohne FE |
Series Title: |
Applied Physics Letters
74 |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Description not available. |