This title appears in the Scientific Report :
1999
Properties of ion implanted epitaxial CoSi2/Si(100) after rapid thermal oxidation
Properties of ion implanted epitaxial CoSi2/Si(100) after rapid thermal oxidation
Saved in:
Personal Name(s): | Zhao, Q. T. |
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Kluth, P. / Xu, J. / Kappius, L. / Zastrow, U. / Wang, Z. L. / Mantl, S. | |
Contributing Institute: |
Institut für Schicht- und Ionentechnik; ISI |
Published in: |
ICACS |
Imprint: |
1999
|
Conference: | Odense, Dänemark 1999-08-02 00:00:00 |
Document Type: |
Poster |
Research Program: |
Ionentechnik |
Publikationsportal JuSER |
Description not available. |