This title appears in the Scientific Report :
1999
Please use the identifier:
http://hdl.handle.net/2128/4431 in citations.
Neuartige Dünnschichtsysteme auf Basis der intermetallischen Verbindungen CoGa und InPd
Neuartige Dünnschichtsysteme auf Basis der intermetallischen Verbindungen CoGa und InPd
The growth and properties of thin weIl-ordered oxide, nitride and oxinitride films on the base of the intermetallic alloys Co Ga and InPd were investigated by means of high-resolution electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM), low-energy electron diffraction (LEED...
Saved in:
Personal Name(s): | Schmitz, G. |
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Contributing Institute: |
Institut für Grenzflächenforschung und Vakuumphysik; IGV |
Imprint: |
Jülich
Forschungszentrum, Zentralbibliothek
1999
|
Dissertation Note: |
Düsseldorf, Univ., Diss., 1999 |
Document Type: |
Book Dissertation / PhD Thesis |
Research Program: |
Grenzflächenaspekte der Informationstechnik |
Series Title: |
Berichte des Forschungszentrums Jülich
3634 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
The growth and properties of thin weIl-ordered oxide, nitride and oxinitride films on the base of the intermetallic alloys Co Ga and InPd were investigated by means of high-resolution electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Particular attention was paid to the study of the initial stages of the film growth in order to elucidate the complex growth mechanisms and to gather important information in view of an optimal preparation of homogeneous weIl-ordered films. CoGa and InPd single crystals with different surface orientations serve as substrate materials. The intermetallic alloys consist of a transition metal (Co, Pd) and a group-III element (Ga, In). Thin crystalline ß-Ga203 films on CoGa(OOl) can be prepared upon adsorption of O2 at 300 K and subsequent annealing at 700 K or by oxidation of the sampIe directly at 700 K, respectively. Due to thermodynamical reasons the oxidation is restricted to the Ga atoms of the CoGa substrate. In a simplified picture the film growth process results from the dissociation of oxygen molecules, the segregation of Ga atoms from the bulk to the surface and finally the re action and formation of gallium oxide. As a consequence of the smaIllattice mismatch between film and substrate, the growing epitaxial ß-Ga203 film is perfectly ordered. Gallium oxide has attracted much interest recently because it can be used as a gas sensor for the detection of reducing gases, as an oxygen sensor at high temperatures and as support material in model catalysts. In addition, the thin film system ß-Ga203jCoGa(001) has promising properties for the application in magnetoelectronic devices based on the so-called tunneling magneto resistance effect (TMR). Ammonia (NH3) adsorption on CoGa(111) at 80 K and subsequent thermal decomposition at elevated temperatures lead to the formation of thin well-ordered GaN films with a wurtzite type structure. The lattice parameter as weIl as the vibronic and electronic properties are in perfeet agreement with the reported values of the corresponding bulk material. Like AIN and InN, GaN belongs to the group of large band-gap II 1-V semiconductors which are promising materials for the use in optoelectronic devices |