This title appears in the Scientific Report :
1998
High temperature STM investigations of the growth of Si and Ge on silicon surfaces
High temperature STM investigations of the growth of Si and Ge on silicon surfaces
Saved in:
Personal Name(s): | Voigtländer, B. |
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Contributing Institute: |
Institut für Grenzflächenforschung und Vakuumphysik; IGV |
Published in: |
10th International Conference on Molecular Beam Epitaxy |
Imprint: |
1998
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Conference: | Cannes, France 1998-08-31 00:00:00 |
Document Type: |
Conference Presentation |
Research Program: |
Grenzflächenaspekte der Informationstechnik |
Publikationsportal JuSER |
Description not available. |