This title appears in the Scientific Report :
2001
Mechanism of interdiffusion and thermal stability upon annealing of AIAs/GaAs:Be quantum wells grown under low temperature conditions
Mechanism of interdiffusion and thermal stability upon annealing of AIAs/GaAs:Be quantum wells grown under low temperature conditions
Saved in:
Personal Name(s): | Tillmann, R. G. E. |
---|---|
Luysberg, M. / Fattah, A. / Specht, P. / Weber, E. R. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: |
Microscopy of Semiconducting Materials 2001 : Proceedings of the 12th International Conference on Microscopy of Semiconducting Materials, Oxford University, 25 – 29 March 2001 / ed. A G Cullis ... - 2002. - (Institute of Physics conference series ; 169). - 0-7503-0818-4. - S. 102 - 108 |
Imprint: |
2001
|
ISBN: |
0-7503-0818-4 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
ohne FE |
Publikationsportal JuSER |
Description not available. |