This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1007/s00339-008-4962-8 in citations.
Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon
Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon
Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-kappa gate dielectric in a gate last process. The GdScO3 films were deposited by electron beam evapor...
Saved in:
Personal Name(s): | Roeckerath, M. |
---|---|
Lopes, J. M. J. / Durgun Özben, E. / Sandow, C. / Lenk, S. / Heeg, T. / Schubert, J. / Mantl, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Applied physics / A, 94 (2009) S. 521 - 524 |
Imprint: |
Berlin
Springer
2009
|
Physical Description: |
521 - 524 |
DOI: |
10.1007/s00339-008-4962-8 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics A
94 |
Subject (ZB): | |
Publikationsportal JuSER |
Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-kappa gate dielectric in a gate last process. The GdScO3 films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveals well behaved output and transfer characteristics with high I (on)/I (off) ratios of 10(6)-10(8), and steep inverse subthreshold slopes down to 66 mV/dec. Carrier mobilities of 155 cm(2)/Vs for the conventional and 366 cm(2)/Vs for the strained silicon substrates were determined. |