This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1238/Physica.Topical.091a00061 in citations.
Behaviour of silicon-doped CFC limiter under high heat load in TEXTOR-94
Behaviour of silicon-doped CFC limiter under high heat load in TEXTOR-94
In order to study the impurity production, recycling and power deposition a Si doped CFC test limiter (NS31) was used in TEXTOR-94. The release of impurities (C, Si, O, Cr, CD radicals) was measured spectroscopically. A reduced methane production was found in the Si doped graphite when compared to a...
Saved in:
Personal Name(s): | Huber, A. |
---|---|
Philipps, V. / Hirai, T. / Kirschner, A. / Lehnen, M. / Pospieszczyk, A. / Schweer, B. / Sergienko, G. | |
Contributing Institute: |
Institut für Plasmaphysik; IPP |
Published in: | Physica scripta, T91 (2001) S. 61 - 64 |
Imprint: |
Bristol
IoP Publ.
2001
|
Physical Description: |
61 - 64 |
DOI: |
10.1238/Physica.Topical.091a00061 |
Document Type: |
Journal Article |
Research Program: |
Kernfusion und Plasmaforschung |
Series Title: |
Physica Scripta Topical Issue
91 |
Subject (ZB): | |
Publikationsportal JuSER |
In order to study the impurity production, recycling and power deposition a Si doped CFC test limiter (NS31) was used in TEXTOR-94. The release of impurities (C, Si, O, Cr, CD radicals) was measured spectroscopically. A reduced methane production was found in the Si doped graphite when compared to a pure graphite limiter. A smaller decrease of the carbon fluxes could also be observed. The limiter contained about 1%-1.5% of Si, but a relative Si flux (Si/D) from the Si doped CFC surface between 0.12% and 0.4% has been measured. A chemical erosion of Si due to formation of SiDx has not been observed. Silicon evaporated from the surface at temperatures above 1500 degreesC. This led to an increase of Si concentration and total radiation losses from the plasma. Surface analysis shows the formation of microcracks and holes on the plasma exposed limiter surface. The released Si was deposited in the vicinity of the tangency point of the limiter. Whereas a Si depletion was observed in the area of highest power loading with values reaching in and in-between fibres values of 0.03% and 0.02% respectively. |