This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1016/j.physb.2003.09.088 in citations.
Strain relaxation in LT-GaAs by the agglomeration of As antisites
Strain relaxation in LT-GaAs by the agglomeration of As antisites
Investigations on the lattice distortion caused by point defects in As-rich GaAs have been performed employing a self-consistent-charge density-functional-based tight-binding method. While both probable defects in As-rich material, the As antisite and the As interstitial, are causing significant lat...
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Personal Name(s): | Staab, T. E. M. |
---|---|
Nieminen, R. M. / Luysberg, M. / Gebauer, J. / Frauenheim, T. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Physica / B, 340-342 (2003) S. 293 - 298 |
Imprint: |
Amsterdam
North-Holland Physics Publ.
2003
|
Physical Description: |
293 - 298 |
DOI: |
10.1016/j.physb.2003.09.088 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Physica B: Condensed Matter
340-342 |
Subject (ZB): | |
Publikationsportal JuSER |
Investigations on the lattice distortion caused by point defects in As-rich GaAs have been performed employing a self-consistent-charge density-functional-based tight-binding method. While both probable defects in As-rich material, the As antisite and the As interstitial, are causing significant lattice distortion, only the isolated As antisite leads to lattice strain in agreement with experiment. Agglomerations of As antisites always show a negative binding energy, which is growing with size of the precipitate. We show that already for the smallest agglomerates of two and three antisites the induced lattice strain is slightly relaxed. (C) 2003 Elsevier B.V. All rights reserved. |