This title appears in the Scientific Report :
2003
Please use the identifier:
http://hdl.handle.net/2128/1373 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.68.205327 in citations.
STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations
STM measurements on the InAs(110) surface directly compared with surface electronic structure calculations
Ab initio density-functional-theory-local-density-approximation electronic structure calculations are performed for the InAs(110) surface and compared with scanning tunnel microscopy (STM) measurements using the Tersoff-Hamann model. In both, calculations and measurements, we see the same atomic fea...
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Personal Name(s): | Klijn, J. |
---|---|
Sacharow, L. / Meyer, Ch. / Blügel, S. / Morgenstern, M. / Wiesendanger, R. | |
Contributing Institute: |
Theorie I; IFF-TH-I |
Published in: | Physical Review B Physical review / B, 68 68 (2003 2003) 20 20, S. 205327 205327 |
Imprint: |
College Park, Md.
APS
2003
|
Physical Description: |
205327 |
DOI: |
10.1103/PhysRevB.68.205327 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Physical Review B
68 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.68.205327 in citations.
Ab initio density-functional-theory-local-density-approximation electronic structure calculations are performed for the InAs(110) surface and compared with scanning tunnel microscopy (STM) measurements using the Tersoff-Hamann model. In both, calculations and measurements, we see the same atomic features. At negative and small positive energies, the local density of states is concentrated around the As atom, while at higher positive energies it is centered above the In atom, because of the appearance of the In dangling bond. Moreover, we describe two types of irregular STM images on the InAs(110) surface. First, we measure dI/dV images exhibiting atomic resolution at voltages within the band gap, which, however, still can be understood within the Tersoff-Hamann model as due to a higher-order term. Second, we measure features on the subatomic scale with certain tips at low tip-sample distance, which are most likely caused by elastic interactions between the tip and the surface. |