This title appears in the Scientific Report :
2004
Please use the identifier:
http://dx.doi.org/10.1063/1.1759065 in citations.
Please use the identifier: http://hdl.handle.net/2128/1975 in citations.
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
Amorphous LaAlO3 thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We have studied these abrupt interfaces by Auger electron spectroscopy, high-resolution transmission electron microscopy, medium-energy ion scatt...
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Personal Name(s): | Edge, L. F. |
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Schlom, D. G. / Brewer, R. T. / Chabal, Y. J. / Williams, J. R. / Chambers, S. A. / Hinkle, C. / Lucovsky, G. / Yang, Y. / Stemmer, S. / Copel, M. / Holländer, B. / Schubert, J. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics letters, 84 (2004) S. 4629 - 4631 |
Imprint: |
Melville, NY
American Institute of Physics
2004
|
Physical Description: |
4629 - 4631 |
DOI: |
10.1063/1.1759065 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
84 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1975 in citations.
Amorphous LaAlO3 thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We have studied these abrupt interfaces by Auger electron spectroscopy, high-resolution transmission electron microscopy, medium-energy ion scattering, transmission infrared absorption spectroscopy, and x-ray photoelectron spectroscopy. Together these techniques indicate that the films are fully oxidized and have less than 0.2 A of SiO2 at the interface between the amorphous LaAlO3 and silicon. These heterostructures are being investigated for alternative gate dielectric applications and provide an opportunity to control the interface between the silicon and the gate dielectric. (C) 2004 American Institute of Physics. |