This title appears in the Scientific Report :
2004
Please use the identifier:
http://dx.doi.org/10.1016/j.jmmm.2003.12.784 in citations.
Exchange interactions and Curie temperatures in diluted magnetic semiconductor
Exchange interactions and Curie temperatures in diluted magnetic semiconductor
Curie temperatures (T-C) for Mn-doped GaN, GaP, GaAs and GaSb are calculated from first-principles by using a mapping on the Heisenberg model in the mean field approximation. Analysing concentration dependences of T-C as a function of the Mn concentration c, exchange interactions in diluted magnetic...
Saved in:
Personal Name(s): | Sato, K. |
---|---|
Dederichs, P. H. / Katayama-Yoshida, H. / Kudrnovsky, J. | |
Contributing Institute: |
Theorie III; IFF-TH-III |
Published in: | Journal of magnetism and magnetic materials, 272-276 (2004) S. 1983 - 1984 |
Imprint: |
Amsterdam
North-Holland Publ. Co.
2004
|
Physical Description: |
1983 - 1984 |
DOI: |
10.1016/j.jmmm.2003.12.784 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Journal of Magnetism and Magnetic Materials
272-276 |
Subject (ZB): | |
Publikationsportal JuSER |
Curie temperatures (T-C) for Mn-doped GaN, GaP, GaAs and GaSb are calculated from first-principles by using a mapping on the Heisenberg model in the mean field approximation. Analysing concentration dependences of T-C as a function of the Mn concentration c, exchange interactions in diluted magnetic semiconductors are discussed. (C) 2003 Elsevier B.V. All rights reserved. |