This title appears in the Scientific Report :
2001
Strain relaxation of pseudomorphic Si(1-X)GeX layers on Si(100) after helium ion implantation
Strain relaxation of pseudomorphic Si(1-X)GeX layers on Si(100) after helium ion implantation
Saved in:
Personal Name(s): | Mantl, S. |
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Holländer, B. / Lenk, S. / Kirch, D. / Luysberg, M. / Trinkaus, H. / Hackbarth, T. / Herzog, H.-J. / Fichtner, P. F. P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Institut für Medizin; IME Mikrostrukturforschung; IFF-IMF |
Published in: |
EMRS 2001 |
Imprint: |
2001
|
Conference: | Strasbourg 2001-06-05 |
Document Type: |
Talk (non-conference) |
Research Program: |
Ionentechnik |
Publikationsportal JuSER |
Description not available. |