This title appears in the Scientific Report :
2001
Please use the identifier:
http://hdl.handle.net/2128/2158 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1380403 in citations.
The band-gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
The band-gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepare...
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Personal Name(s): | Costina, I. |
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Franchy, R. | |
Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 |
Published in: | Applied physics letters, 78 (2001) S. 4139 |
Imprint: |
Melville, NY
American Institute of Physics
2001
|
Physical Description: |
4139 |
DOI: |
10.1063/1.1380403 |
Document Type: |
Journal Article |
Research Program: |
Grenzflächenaspekte der Informationstechnik |
Series Title: |
Applied Physics Letters
78 |
Subject (ZB): | |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1380403 in citations.
The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O-2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is similar to3.2 and similar to4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. (C) 2001 American Institute of Physics. |