This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1063/1.3103555 in citations.
Please use the identifier: http://hdl.handle.net/2128/17249 in citations.
Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells
Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells
We report on the low resistance state (LRS) stability analysis of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells under elevated temperature and bias current stress conditions. The activation energy was found to be about 1.02 eV, which is comparable to that of an electromigration-induced...
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Personal Name(s): | Soni, R. |
---|---|
Meuffels, P. / Kohlstedt, H. / Kügeler, C. / Waser, R. | |
Contributing Institute: |
Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT |
Published in: | Applied physics letters, 94 (2009) S. 123503 |
Imprint: |
Melville, NY
American Institute of Physics
2009
|
Physical Description: |
123503 |
DOI: |
10.1063/1.3103555 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Applied Physics Letters
94 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/17249 in citations.
We report on the low resistance state (LRS) stability analysis of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells under elevated temperature and bias current stress conditions. The activation energy was found to be about 1.02 eV, which is comparable to that of an electromigration-induced failure process. Experimental results also show that there is trade-off between the LRS stability and the thickness of Ge0.3Se0.7 layer. |