This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0304-8853(00)00359-0 in citations.
Dielectric breakdown of lithographically patterned tunnel junctions prepared by UV oxidation method
Dielectric breakdown of lithographically patterned tunnel junctions prepared by UV oxidation method
Future magnetoresistive random access memories will require a vast matrix of reliable magnetic tunnel junctions. Therefore, the time-dependent dielectric breakdown of lithographically defined Co/Al2O3/Ni80Fe20 tunnel junctions, oxidized using an ultraviolet light-assisted oxidation process in O-2, w...
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Personal Name(s): | Girgis, E. |
---|---|
Boeve, H. / de Boeck, J. / Schelten, J. / Rottländer, P. / Kohlstedt, H. / Grünberg, P. A. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Elektronische Eigenschaften; IFF-IEE Elektrokeramische Materialien; IFF-EKM |
Published in: | Journal of magnetism and magnetic materials, 222 (2001) S. 133 |
Imprint: |
Amsterdam
North-Holland Publ. Co.
2001
|
Physical Description: |
133 |
DOI: |
10.1016/S0304-8853(00)00359-0 |
Document Type: |
Journal Article |
Research Program: |
Ionen- und Lithographietechnik |
Series Title: |
Journal of Magnetism and Magnetic Materials
222 |
Subject (ZB): | |
Publikationsportal JuSER |
Future magnetoresistive random access memories will require a vast matrix of reliable magnetic tunnel junctions. Therefore, the time-dependent dielectric breakdown of lithographically defined Co/Al2O3/Ni80Fe20 tunnel junctions, oxidized using an ultraviolet light-assisted oxidation process in O-2, was investigated by means of voltage ramp experiments on a series of patterned junctions with different area. As the applied voltage approaches 2 V, almost immediate breakdown of the junction is observed. This leads to an irreversible decrease of the junction resistance by more than 90%, For smaller tunnel junctions, a larger breakdown voltage was measured which confirms the statistical origin of the breakdown phenomenon. (C) 2000 Elsevier Science B.V. All rights reserved. |