This title appears in the Scientific Report :
2001
Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication
Strain relaxation of pseudomorphic Si(1-X)GeX/Si(100) heterostructures after hydrogen or helium ion implantation for virtual substrate fabrication
Saved in:
Personal Name(s): | Holländer, B. |
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Lenk, S. / Mantl, S. / Trinkaus, H. / Kirch, D. / Luysberg, M. / Hackbarth, T. / Herzog, H.-J. / Fichtner, P. F. P. | |
Contributing Institute: |
Elektrokeramische Materialien; IFF-EKM Mikrostrukturforschung; IFF-IMF Theorie III; IFF-TH-III Institut für Halbleiterschichten und Bauelemente; ISG-1 Institut für Medizin; IME |
Published in: | Nuclear instruments & methods in physics research / B, 175/177 (2001) S. 357 - 367 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2001
|
Physical Description: |
357 - 367 |
Document Type: |
Journal Article |
Research Program: |
Festkörperforschung für die Informationstechnik Ionentechnik |
Series Title: |
Nuclear Instruments and Methods in Physics Research Section B
175/177 |
Publikationsportal JuSER |
Description not available. |