This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1049/el:20010926 in citations.
AlGaN/GaN round-HEMTs on (111) silicon substrates
AlGaN/GaN round-HEMTs on (111) silicon substrates
AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN GaN (x = 0.23) material structures were grown on (III) p-Si by LP-MOVPE. Devices with 0.3 mum gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak ext...
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Personal Name(s): | Javorka, P. |
---|---|
Alam, A. / Nastase, N. / Marso, M. / Hardtdegen, H. / Heuken, M. / Lüth, H. / Kordos, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Electronics letters, 37 (2001) S. 1478 |
Imprint: |
London
Institution
2001
|
Physical Description: |
1478 |
DOI: |
10.1049/el:20010926 |
Document Type: |
Journal Article |
Research Program: |
Halbleiterbauelemente und Analytik Halbleiterschichtsysteme und Mesoskopische Strukturen |
Series Title: |
Electronics Letters
37 |
Subject (ZB): | |
Publikationsportal JuSER |
AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN GaN (x = 0.23) material structures were grown on (III) p-Si by LP-MOVPE. Devices with 0.3 mum gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak extrinsic transconductance of 110 mS/mm. Highest saturation current reported so far and static output characteristics up to 20V demonstrate that the devices are capable of handling 16 W/mm of static beat dissipation without any degradation of their performance. |