This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0167-9317(00)00445-7 in citations.
Nanometer patterning of thin CoSi2-films by application of local stress
Nanometer patterning of thin CoSi2-films by application of local stress
We have developed a self-assembly method for patterning thin CoSi2 layers on Si(100) during their formation in a solid state reaction. This technique is based on anisotropic diffusion in a local stress field during rapid thermal processing. The stress is induced by a layer structure consisting of 30...
Saved in:
Personal Name(s): | Kluth, P. |
---|---|
Detavernier, C. / Zhao, Q. T. / Xu, J. / Kappius, L. / Bay, H. / Lenk, S. / Mantl, S. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Microelectronic engineering, 55 (2001) S. 177 |
Imprint: |
[S.l.] @
Elsevier
2001
|
Physical Description: |
177 |
DOI: |
10.1016/S0167-9317(00)00445-7 |
Document Type: |
Journal Article |
Research Program: |
Ionentechnik |
Series Title: |
Microelectronic Engineering
55 |
Subject (ZB): | |
Publikationsportal JuSER |
We have developed a self-assembly method for patterning thin CoSi2 layers on Si(100) during their formation in a solid state reaction. This technique is based on anisotropic diffusion in a local stress field during rapid thermal processing. The stress is induced by a layer structure consisting of 30 nm SiO2 and 300 nm Si3N4 which is patterned with conventional optical lithogaphy. We have investigated two different silicide formation processes. Firstly, we deposited Co on Si in a UHV MBE chamber. Rapid thermal annealing leads to the formation of polycrystalline CoSi2. Secondly, we used a titanium oxide mediated epitaxy process. For both processes we observed nanostructures with dimensions of about 100 nm showing wave-lice separation edges in the first case and good uniformity in the second case. (C) 2001 Elsevier Science B.V. All rights reserved. |