This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1002/1521-396X(200112)188:2<647::AID-PSSA647>3.3.CO;2-R in citations.
The influence of nucleation parameters on GaN buffer layer properties used for HEMT application
The influence of nucleation parameters on GaN buffer layer properties used for HEMT application
This paper reports on the optimization of GaN nucleation conditions on sapphire with respect to GaN buffer laver characteristics for HEMT (high electron mobility transistor) application. The analysis of interactions between the nucleation parameters lead us to an optimized GaN buffer which exhibits...
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Personal Name(s): | Nastase, N. |
---|---|
Hardtdegen, H. / Schmidt, R. / Bay, H. / Lüth, H. / Alam, A. / Heuken, M. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Physica status solidi / A, 188 (2001) S. 647 |
Imprint: |
Weinheim
Wiley-VCH
2001
|
Physical Description: |
647 |
DOI: |
10.1002/1521-396X(200112)188:2<647::AID-PSSA647>3.3.CO;2-R |
Document Type: |
Journal Article |
Research Program: |
Ionentechnik Halbleiterschichtsysteme und Mesoskopische Strukturen |
Series Title: |
Physica Status Solidi A
188 |
Subject (ZB): | |
Publikationsportal JuSER |
This paper reports on the optimization of GaN nucleation conditions on sapphire with respect to GaN buffer laver characteristics for HEMT (high electron mobility transistor) application. The analysis of interactions between the nucleation parameters lead us to an optimized GaN buffer which exhibits a roughness of 0.33 nm. an excitonic luminescence at 2 K which dominates the spectra, as well as a Hall mobility at 300 K mu = 540 cm(2)/VS for a carrier concentration of it = 2 x 10(17) cm(-3). Furthermore, doped HEMT structures were grown employing this buffer. Their electrical and structural characteristics are presented. |