This title appears in the Scientific Report :
2004
Please use the identifier:
http://hdl.handle.net/2128/1993 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1765851 in citations.
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures after Si+ ion implantation
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures after Si+ ion implantation
The strain relaxation of pseudomorphic Si1-xGex layers (x=0.21,...,0.33) was investigated after low-dose Si+ ion implantation and annealing. The layers were grown by molecular-beam epitaxy or chemical vapor deposition on Si(100) or silicon-on-insulator. Strain relaxation of up to 75% of the initial...
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Personal Name(s): | Holländer, B. |
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Buca, D. / Mörschbächer, M. / Lenk, S. / Mantl, S. / Herzog, H.-J. / Hackbarth, Th. / Loo, R. / Caymax, M. / Fichtner, P. F. P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Journal of applied physics, 96 (2004) S. 1745 - 1747 |
Imprint: |
Melville, NY
American Institute of Physics
2004
|
Physical Description: |
1745 - 1747 |
DOI: |
10.1063/1.1765851 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Journal of Applied Physics
96 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1765851 in citations.
The strain relaxation of pseudomorphic Si1-xGex layers (x=0.21,...,0.33) was investigated after low-dose Si+ ion implantation and annealing. The layers were grown by molecular-beam epitaxy or chemical vapor deposition on Si(100) or silicon-on-insulator. Strain relaxation of up to 75% of the initial strain was observed at temperatures as low as 850 degreesC after implantation of Si ions with doses below 2x10(14) cm(-2). We suggest that the Si implantation generates primarily dislocation loops in the SiGe layer and in the underlying Si which convert to strain relaxing misfit segments. The obtained results are comparable to strain relaxation achieved after He+ implantation with doses of 1-2x10(16) cm(-2). (C) 2004 American Institute of Physics. |