Description: Electrical and optical characterization of semiconducting Ru2Si3 films and single crystals

This title appears in the Scientific Report : 2001

Electrical and optical characterization of semiconducting Ru2Si3 films and single crystals

Recently, Ru2Si3 has been predicted to be a direct semiconductor with a band gap of approximate to0.8 eV. Since the corresponding wavelength of this potential light emitter coincides with the absolute absorption minimum of glass fibers of 1.5 mum, considerable attention has been attracted. Measureme...

Personal Name(s):	Lenssen, D.
	Carius, R. / Mantl, S. / Birdwell, A. G.
Contributing Institute:	Institut für Photovoltaik; IPV Institut für Halbleiterschichten und Bauelemente; ISG-1
Published in:	Journal of applied physics, 90 (2001) S. 3347 - 3352
Imprint:	Melville, NY American Institute of Physics 2001
Physical Description:	3347 - 3352
DOI:	10.1063/1.1402965
Document Type:	Journal Article
Research Program:	Grundlagen und Technologie von Dünnschichtsolarzellen
Series Title:	Journal of Applied Physics 90
Subject (ZB):	J
Link:	OpenAccess
	Publikationsportal JuSER

Please use the identifier: http://hdl.handle.net/2128/1994 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1402965 in citations.

Recently, Ru2Si3 has been predicted to be a direct semiconductor with a band gap of approximate to0.8 eV. Since the corresponding wavelength of this potential light emitter coincides with the absolute absorption minimum of glass fibers of 1.5 mum, considerable attention has been attracted. Measurements of the temperature dependence of the electrical resistivity of silicide films on insulating substrates were carried out in van der Pauw geometry. The results were explained by assuming carrier hopping over grain boundaries. The optical absorption coefficient was measured on thin films grown on various substrates, on self-sustaining films, where the substrate was partly removed and on a single crystal by photothermal deflection spectroscopy. A direct band gap at 0.84 eV was found. The absorption coefficient is very low up to approximate to1.5 eV, likely due to a low density of states, and then strongly increases at higher energies. The experimental results qualitatively confirm the predictions of the band structure calculations. (C) 2001 American Institute of Physics.