This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1002/1521-396X(200105)185:1<121::AID-PSSA121>3.0.CO;2-I in citations.
Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys
Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys
Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP stru...
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Personal Name(s): | Krause, M. |
---|---|
Topic, M. / Stiebig, H. / Wagner, H. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Physica status solidi / A, 185 (2001) S. 121 - 127 |
Imprint: |
Weinheim
Wiley-VCH
2001
|
Physical Description: |
121 - 127 |
DOI: |
10.1002/1521-396X(200105)185:1<121::AID-PSSA121>3.0.CO;2-I |
Document Type: |
Journal Article |
Research Program: |
Grundlagen und Technologie von Dünnschichtsolarzellen |
Series Title: |
Physica Status Solidi A
185 |
Subject (ZB): | |
Publikationsportal JuSER |
Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum Cefficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. |