This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0040-6090(00)01744-2 in citations.
Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties
Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties
Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si and subsequent dry oxidation and (ii) Fe+ ion implantation at the interface of SiO2/Si and subsequent annealing. These samples were characterized by Rutherford backscattering spectrometry (RBS), trans...
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Personal Name(s): | Oyoshi, A. N. |
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Lenssen, D. / Carius, R. / Mantl, S. | |
Contributing Institute: |
Institut für Photovoltaik; IPV Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Thin solid films, 381 (2001) S. 202 - 208 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2001
|
Physical Description: |
202 - 208 |
DOI: |
10.1016/S0040-6090(00)01744-2 |
Document Type: |
Journal Article |
Research Program: |
Ionentechnik Grundlagen und Technologie von Dünnschichtsolarzellen |
Series Title: |
Thin Solid Films
381 |
Subject (ZB): | |
Publikationsportal JuSER |
Iron-disilicide precipitates were formed by two different processes; (i) Fe+ ion implantation in Si and subsequent dry oxidation and (ii) Fe+ ion implantation at the interface of SiO2/Si and subsequent annealing. These samples were characterized by Rutherford backscattering spectrometry (RBS), transmission electron microscope (TEM), X-ray diffraction (XRD), photothermal deflection spectroscopy (PDS) and photoluminescence (PL). The implanted Fe concentrated at the SiO2/Si interface and formed beta -FeSi2 precipitates by both processes. However, part of the implanted Fe still remained in SiO2 and possibly formed Fe precipitates through the process (ii). It is notable that a clear interface has formed through the plc,cess (i) whereas a defect rich region was produced in Si near the Si/SiO2 interface by the process (ii). Weak optical absorption above 0.8 eV corresponding to the band gap of beta -FeSi2 was confirmed for both processes. It is noted that sharp PL was observed at 0.81 eV at 5 K for the sample (i) whereas broad PL was observed for the sample (ii). The origin of the FL was discussed from the: point of view of direct transition of strained beta -FeSi2, a shallow acceptor level in a non-intentionally doped p-type beta -FeSi2 and defect levels, in particular dislocations in Si. (C) 2001 Elsevier Science B.V. All rights reserved. |