This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0167-9317(00)00451-2 in citations.
Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation
Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation
Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon as well as in silicon containing a cavity layer prepared by a hydrogen implant and subsequent rapid thermal annealing. The samples were characterised by photoluminescence, Raman spectroscopy and cross s...
Saved in:
Personal Name(s): | Schuller, B. |
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Carius, R. / Mantl, S. | |
Contributing Institute: |
Institut für Photovoltaik; IPV Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Microelectronic engineering, 55 (2001) S. 219 - 225 |
Imprint: |
[S.l.] @
Elsevier
2001
|
Physical Description: |
219 - 225 |
DOI: |
10.1016/S0167-9317(00)00451-2 |
Document Type: |
Journal Article |
Research Program: |
Ionentechnik Grundlagen und Technologie von Dünnschichtsolarzellen |
Series Title: |
Microelectronic Engineering
55 |
Subject (ZB): | |
Publikationsportal JuSER |
Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon as well as in silicon containing a cavity layer prepared by a hydrogen implant and subsequent rapid thermal annealing. The samples were characterised by photoluminescence, Raman spectroscopy and cross section transmission electron microscopy. We find no significant shifts of the FeSi2 Raman lines, indicating that the iron disilicide precipitates are in the same strain state in all our samples. Furthermore, comparing the 246 cm(-1) FeSi2 Raman line from precipitates and from a buried polycrystalline layer, we conclude that most of the FeSi2 precipitates are unstrained. Consequently, the variation of the photoluminescence in differently prepared samples cannot be due to strain effects in the silicide precipitates. (C) 2001 Elsevier Science B.V. All rights reserved. |