This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0925-3467(01)00033-7 in citations.
Optical properties of beta-FeSi2 precipitate layers in silicon
Optical properties of beta-FeSi2 precipitate layers in silicon
Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon. Photoluminescence measurements at 6 K show intense luminescence at 0.8 eV. To investigate the character of the optical transition responsible for the 0.8 eV luminescence, a system for time-dependent lu...
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Personal Name(s): | Schuller, B. |
---|---|
Carius, R. / Mantl, S. | |
Contributing Institute: |
Institut für Photovoltaik; IPV Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Optical materials, 17 (2001) S. 121 - 124 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2001
|
Physical Description: |
121 - 124 |
DOI: |
10.1016/S0925-3467(01)00033-7 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen und Technologie von Dünnschichtsolarzellen |
Series Title: |
Optical Materials
17 |
Subject (ZB): | |
Publikationsportal JuSER |
Semiconducting iron disilicide precipitates have been fabricated by ion beam synthesis in silicon. Photoluminescence measurements at 6 K show intense luminescence at 0.8 eV. To investigate the character of the optical transition responsible for the 0.8 eV luminescence, a system for time-dependent luminescence measurements in the near infrared with a time resolution of better than 30 ns and single photon counting capability has been set up. First measurements on our samples showed a photoluminescence decay time of 35 mus at 20 K, which decreased to 7 mus at 77 K. (C) 2001 Elsevier Science B.V. All rights reserved. . |