This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0925-3467(01)00057-X in citations.
Optical properties of semiconducting Ru2Si3
Optical properties of semiconducting Ru2Si3
A detailed study of optical properties of ruthenium silicide (Ru2Si3) has been performed by means of first-principle full-potential linearized-augmented-plane-wave method (FLAPW) calculations. The calculated spectral dependence of the absorption coefficient was compared with absorption measurements,...
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Personal Name(s): | Shaposhnikov, V. I. |
---|---|
Ivanenko, L. I. / Migas, D. B. / Lenssen, D. / Carius, R. / Mantl, S. / Borisenko, V. E. | |
Contributing Institute: |
Institut für Photovoltaik; IPV Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Optical materials, 17 (2001) S. 339 - 341 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2001
|
Physical Description: |
339 - 341 |
DOI: |
10.1016/S0925-3467(01)00057-X |
Document Type: |
Journal Article |
Research Program: |
Grundlagen und Technologie von Dünnschichtsolarzellen |
Series Title: |
Optical Materials
17 |
Subject (ZB): | |
Publikationsportal JuSER |
A detailed study of optical properties of ruthenium silicide (Ru2Si3) has been performed by means of first-principle full-potential linearized-augmented-plane-wave method (FLAPW) calculations. The calculated spectral dependence of the absorption coefficient was compared with absorption measurements, indicating very good agreement. The compound is found to be a direct-gap semiconductor with low oscillator strength of the first interband transition. (C) 2001 Elsevier Science B.V. All rights reserved. |