This title appears in the Scientific Report :
2001
Please use the identifier:
http://dx.doi.org/10.1016/S0022-3115(01)00596-7 in citations.
Oxide layers of Zr-1%Nb under PWR primary circuit conditions
Oxide layers of Zr-1%Nb under PWR primary circuit conditions
Oxide layers were grown on Zr-1% Nb under conditions simulating those in VVER-type pressurised water reactors (PWRs), viz. in berate solutions in an autoclave at 290 degreesC. The layers were characterised by various methods: their respective thickness values were determined by weight gain measureme...
Saved in:
Personal Name(s): | Nagy, G. M. |
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Kerner, Z. / Battistig, G. | |
Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 |
Published in: | Journal of nuclear materials, 297 (2001) S. 62 |
Imprint: |
Amsterdam [u.a.]
Elsevier Science
2001
|
Physical Description: |
62 |
DOI: |
10.1016/S0022-3115(01)00596-7 |
Document Type: |
Journal Article |
Research Program: |
Struktur und Dynamik von Grenzflächen |
Series Title: |
Journal of Nuclear Materials
297 |
Subject (ZB): | |
Publikationsportal JuSER |
Oxide layers were grown on Zr-1% Nb under conditions simulating those in VVER-type pressurised water reactors (PWRs), viz. in berate solutions in an autoclave at 290 degreesC. The layers were characterised by various methods: their respective thickness values were determined by weight gain measurements, Rutherford backscattering (RBS), nuclear reaction analysis (NRA) and scanning electron microscopy (SEM); the electrical properties were tested by electrochemical impedance spectroscopy. The results show that the oxide layer on Zr-1% Nb is homogeneous and somewhat thicker than that on Zircaloy-4. (C) 2001 Elsevier Science B.V. All rights reserved. |