This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1063/1.1637154 in citations.
Please use the identifier: http://hdl.handle.net/2128/1996 in citations.
Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation
Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation
Conductivity and Hall effect measurements were performed before and after Si3N4 passivation of intentionally undoped and doped AlGaN/GaN heterostructures on Si and SiC substrates. An increase of the sheet carrier density (up to similar to30%) and a slight decrease of the electron mobility (less than...
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Personal Name(s): | Bernát, J. |
---|---|
Javorka, P. / Marso, M. / Kordos, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: | Applied physics letters, 83 (2003) S. 5455 |
Imprint: |
Melville, NY
American Institute of Physics
2003
|
Physical Description: |
5455 |
DOI: |
10.1063/1.1637154 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
83 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1996 in citations.
Conductivity and Hall effect measurements were performed before and after Si3N4 passivation of intentionally undoped and doped AlGaN/GaN heterostructures on Si and SiC substrates. An increase of the sheet carrier density (up to similar to30%) and a slight decrease of the electron mobility (less than 10%) are found in all samples after passivation. The passivation induced sheet carrier density is 1.5-2x10(12) cm(-2) in undoped samples and only 0.7x10(12) cm(-2) in 5-10x10(18) cm(-3) doped samples. The decrease of the electron mobility after passivation is slightly lower in highly doped samples. The channel conductivity in both types of unpassivated samples on Si and SiC substrates increases with an increase in doping density. After passivation, a well-resolved increase of channel conductivity is observed in the undoped or lightly doped samples and nearly the same channel conductivity results in the highly doped samples. (C) 2003 American Institute of Physics. |