This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.77.085212 in citations.
Please use the identifier: http://hdl.handle.net/2128/10798 in citations.
Colossal positive magnetoresistance in a doped nearly magnetic semiconductor
Colossal positive magnetoresistance in a doped nearly magnetic semiconductor
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.
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Personal Name(s): | Hu, R. |
---|---|
Thomas, K. J. / Lee, Y. / Vogt, T. / Choi, E. S. / Mitrovic, V. F. / Hermann, R. P. / Grandjean, F. / Canfield, P. C. / Kim, J. W. / Goldman, A. I. / Petrovic, C. | |
Contributing Institute: |
JCNS; JCNS Neutronenstreuung; IFF-5 JARA-FIT; JARA-FIT Streumethoden; IFF-4 |
Published in: | Physical Review B Physical review / B, 77 77 (2008 2008) 8 8, S. 085212 085212 |
Imprint: |
College Park, Md.
APS
2008
|
Physical Description: |
085212-1 - 085212-5 |
DOI: |
10.1103/PhysRevB.77.085212 |
Document Type: |
Journal Article |
Research Program: |
Großgeräte für die Forschung mit Photonen, Neutronen und Ionen (PNI) Kondensierte Materie |
Series Title: |
Physical Review B
77 |
Subject (ZB): | |
Link: |
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Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/10798 in citations.
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity. |