This title appears in the Scientific Report :
2003
Influence of layer structure and surface passivation on performance of AlGaN/GaN HEMTs on Si and SiC substrates
Influence of layer structure and surface passivation on performance of AlGaN/GaN HEMTs on Si and SiC substrates
Saved in:
Personal Name(s): | Bernát, J. |
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Javorka, P. / Wolter, M. / Fox, P. T. / Marso, M. / Kordos, P. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
2003 International Semiconductor Device Research Symposium |
Imprint: |
2003
|
Conference: | Washington, DC 2003-12-09 |
Document Type: |
Conference Presentation |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |