This title appears in the Scientific Report :
2004
DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation
DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation
Saved in:
Personal Name(s): | Bernát, J. |
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Marso, M. / Fox, P. T. / Kordos, P. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
5th International Conference on Advanced Semiconductors Devices and Microsystems : ASDAM 2004 |
Imprint: |
2004
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Conference: | Smolenice Castle, Slovakia 2004-10-17 |
Document Type: |
Talk (non-conference) |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |