This title appears in the Scientific Report :
2008
Please use the identifier:
http://hdl.handle.net/2128/17232 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.3006891 in citations.
Nanoscale charge transport measurements using a double-tip scanning tunneling microscope
Nanoscale charge transport measurements using a double-tip scanning tunneling microscope
We demonstrate the ability of a double-tip scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM) to perform charge transport measurements on the nanoscale. The STM tips serve as electric probes that can be precisely positioned relative to the surface nanostructures u...
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Personal Name(s): | Jaschinsky, P. |
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Wensorra, J. / Lepsa, M. I. / Myslivecek, J. / Voigtländer, B. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 Grenz- und Oberflächen; IBN-3 JARA-FIT; JARA-FIT |
Published in: | Journal of applied physics, 104 (2008) S. 094307 |
Imprint: |
Melville, NY
American Institute of Physics
2008
|
Physical Description: |
094307 |
DOI: |
10.1063/1.3006891 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Applied Physics
104 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.3006891 in citations.
We demonstrate the ability of a double-tip scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM) to perform charge transport measurements on the nanoscale. The STM tips serve as electric probes that can be precisely positioned relative to the surface nanostructures using the SEM control and the height reference provided by the tunneling contact. The tips work in contact, noncontact, and tunneling modes. We present vertical transport measurements on nanosized GaAs/AlAs resonant tunneling diodes and lateral transport measurements on the conductive surface of 7 x 7 reconstructed Si(111). The high stability of the double-tip STM allows nondestructive electrical contacts to surfaces via the tunneling gaps. We performed two-point electrical measurements via tunneling contacts on the Si(111) (7x7) surface and evaluated them using a model for the charge transport on this surface. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006891] |