This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1116/1.3106627 in citations.
Addition of yttrium into HfO2 films: Microstructure and electrical properties
Addition of yttrium into HfO2 films: Microstructure and electrical properties
The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 degrees C. The complete compositional range (from 1.5 to 99.5 at....
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Personal Name(s): | Dubourdieu, C. |
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Rauwel, E. / Roussel, H. / Ducroquet, F. / Holländer, B. / Rossel, M. / Van Tendeloo, G. / Lhostis, S. / Rushworth, S. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; IBN-1 JARA-FIT; JARA-FIT |
Published in: | Journal of vacuum science & technology / A, 27 (2009) S. 503 - 514 |
Imprint: |
New York, NY
Inst.
2009
|
Physical Description: |
503 - 514 |
DOI: |
10.1116/1.3106627 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Journal of Vacuum Science and Technology A
27 |
Subject (ZB): | |
Publikationsportal JuSER |
The cubic phase of HfO2 was stabilized by addition of yttrium in thin films grown on Si/SiO2 by metal-organic chemical vapor deposition. The cubic phase was obtained for contents of 6.5 at. % Y or higher at a temperature as low as 470 degrees C. The complete compositional range (from 1.5 to 99.5 at. % Y) was investigated. The crystalline structure of HfO2 was determined from x-ray diffraction, electron diffraction, and attenuated total-reflection infrared spectroscopy. For cubic films, the continuous increase in the lattice parameter indicates the formation of a solid-solution HfO2-Y2O3. As shown by x-ray photoelectron spectroscopy, yttrium silicate is formed at the interface with silicon; the interfacial layer thickness increases with increasing yttrium content and increasing film thickness. The dependence of the intrinsic relative permittivity epsilon(r) as a function of Y content was determined. It exhibits a maximum of similar to 30 for similar to 8.8 at. % Y. The cubic phase is stable upon postdeposition high-temperature annealing at 900 degrees C under NH3. |