This title appears in the Scientific Report :
2005
Please use the identifier:
http://dx.doi.org/10.1016/j.sse.2004.08.014 in citations.
High frequency investigation of graded gap injectors for GaAs Gunn diodes
High frequency investigation of graded gap injectors for GaAs Gunn diodes
In this work, we present a detailed high frequency characterization of conventional and optimized Gunn-diodes containing a graded gap injector. It is shown that the Al-concentration in the hot electron injector influences the occupation of the Gamma- and L-valleys and hence the electron drift veloci...
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Personal Name(s): | Montanari, S. |
---|---|
Förster, A. / Lepsa, M. I. / Lüth, H. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Solid state electronics, 49 (2005) S. 245 - 250 |
Imprint: |
Oxford [u.a.]
Pergamon, Elsevier Science
2005
|
Physical Description: |
245 - 250 |
DOI: |
10.1016/j.sse.2004.08.014 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Solid-State Electronics
49 |
Subject (ZB): | |
Publikationsportal JuSER |
In this work, we present a detailed high frequency characterization of conventional and optimized Gunn-diodes containing a graded gap injector. It is shown that the Al-concentration in the hot electron injector influences the occupation of the Gamma- and L-valleys and hence the electron drift velocity in the active Gunn layer. Quantitative values for the occupation of the L-valley can be extracted from the S-parameter measurements. (C) 2004 Elsevier Ltd. All rights reserved. |