This title appears in the Scientific Report :
2005
Please use the identifier:
http://hdl.handle.net/2128/2113 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.1853531 in citations.
Recording of Cell Action Potentials with AlGaN/GaN Field-Effect Transistor Arrays
Recording of Cell Action Potentials with AlGaN/GaN Field-Effect Transistor Arrays
An AlGaN/GaN electrolyte gate field-effect transistor array for the detection of electrical cell signals has been realized. The low-frequency noise power spectral density of these devices exhibits a 1/f characteristic with a dimensionless Hooge parameter of 5 X 10(-3). The equivalent gate-input nois...
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Personal Name(s): | Steinhoff, G. |
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Baur, B. / Wrobel, G. / Ingebrandt, S. / Offenhäusser, A. / Dadgar, A. / Krost, A. / Stutzmann, M. / Eickhoff, M. | |
Contributing Institute: |
Institut für Bio- und Chemosensoren; ISG-2 Center of Nanoelectronic Systems for Information Technology; CNI |
Published in: | Applied physics letters, 86 (2005) S. 033901 |
Imprint: |
Melville, NY
American Institute of Physics
2005
|
Physical Description: |
033901 |
DOI: |
10.1063/1.1853531 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Applied Physics Letters
86 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.1853531 in citations.
An AlGaN/GaN electrolyte gate field-effect transistor array for the detection of electrical cell signals has been realized. The low-frequency noise power spectral density of these devices exhibits a 1/f characteristic with a dimensionless Hooge parameter of 5 X 10(-3). The equivalent gate-input noise under operation conditions has a peak-to-peak amplitude of 15 muV, one order of magnitude smaller than for common silicon-based devices used for extracellular recordings. Extracellular action potentials from a confluent layer of rat heart muscle cells cultivated directly on the nonmetallized gate surface were recorded with a signal amplitude of 75 muV and a signal-to-noise ratio of 5:1. (C) 2005 American Institute of Physics. |