This title appears in the Scientific Report :
2003
Use of Modeling to Develop a New GaN Growth Process with Reduced Parasitic Deposits
Use of Modeling to Develop a New GaN Growth Process with Reduced Parasitic Deposits
Saved in:
Personal Name(s): | Kaluza, N. |
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Hardtdegen, H. / Steins, R. / Schmidt, R. / Yakovlev, E. V. / Talalaev, R. A. / Makarov, Yu. N. | |
Contributing Institute: |
Institut für Halbleiterschichten und Bauelemente; ISG-1 |
Published in: |
18. Workshop des DGKK-Arbeitskreises Epitaxie von III/V Halbleitern |
Imprint: |
2003
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Conference: | Bremen, Germany 2003-12-11 |
Document Type: |
Conference Presentation |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Publikationsportal JuSER |
Description not available. |