This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1364/AO.42.001726 in citations.
Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch
Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch
We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed...
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Personal Name(s): | Zheng, X. |
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Xu, Y. / Sobolewski, R. / Adam, R. / Mikulics, V. V. / Siegel, M. / Kordos, P. | |
Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 |
Published in: | Applied optics, 42 (2003) S. 1726 - 1731 |
Imprint: |
Washington, DC
Optical Soc. of America
2003
|
Physical Description: |
1726 - 1731 |
DOI: |
10.1364/AO.42.001726 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Applied Optics
42 |
Subject (ZB): | |
Publikationsportal JuSER |
We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed across gold coplanar transmission lines deposited on a Si substrate, forming a photoconductive switch. The switch was excited with 110-fs-wide optical pulses, and its photoresponse was measured with an electro-optic sampling system. Using 810-nm optical radiation, we recorded an electrical transient as short as 360 fs (1.25 THz, 3-dB bandwidth) and established that the photo-carrier lifetime in our LT-GaAs was 150 fs. Our free-standing devices exhibited quantum efficiency of the order of similar to7%, and their photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the excitation power, below a well-defined saturation threshold. (C) 2003 Optical Society of America. |